SIHD6N65ET4-GE3

Product Overview

Category

The SIHD6N65ET4-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching circuits.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SIHD6N65ET4-GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): 6A
• On-Resistance (RDS(on)): 1.5Ω
• Gate-Source Voltage (VGS): ±30V
• Total Gate Charge (Qg): 12nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHD6N65ET4-GE3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• Low conduction losses
• Enhanced ruggedness
• ESD protection
• Avalanche energy rating

Advantages

• High voltage capability allows for use in a wide range of applications
• Low on-resistance minimizes power dissipation and improves efficiency
• Fast switching speed enables high-frequency operation

Disadvantages

• Higher gate capacitance may require careful driver design for optimal performance
• Limited current handling capacity compared to higher-rated devices

Working Principles

The SIHD6N65ET4-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supplies

The MOSFET can be used in switch-mode power supplies for efficient voltage regulation and power conversion.

Motor Control

It is suitable for motor drive applications due to its fast switching speed and low on-resistance.

High-Power Switching Circuits

In high-power applications, the MOSFET can be utilized for switching and controlling large currents with minimal losses.

Detailed and Complete Alternative Models

• SIHD6N60E-GE3
• SIHD6N50E-GE3
• SIHD6N70E-GE3

In conclusion, the SIHD6N65ET4-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications. Its characteristics, functional features, and detailed application field plans demonstrate its versatility and importance in modern electronic systems. Additionally, the availability of alternative models provides flexibility in design and application.