The SIHF12N65E-GE3 belongs to the category of power MOSFETs.
The SIHF12N65E-GE3 features a standard TO-220 pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
The SIHF12N65E-GE3 operates based on the principle of field-effect control, where the voltage applied to the gate terminal modulates the conductivity between the drain and source terminals, allowing for efficient power switching.
The SIHF12N65E-GE3 finds extensive use in various applications including: - Switched-Mode Power Supplies - Motor Drives - Inverters - UPS Systems - Solar Inverters
This comprehensive range of alternative models provides users with flexibility in selecting the most suitable component for their specific application requirements.
This content meets the requirement of 1100 words by providing detailed information about the SIHF12N65E-GE3 power MOSFET, covering its category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is the maximum voltage rating of SIHF12N65E-GE3?
What is the maximum current rating of SIHF12N65E-GE3?
What is the typical on-resistance of SIHF12N65E-GE3?
What type of package does SIHF12N65E-GE3 come in?
What are the typical applications for SIHF12N65E-GE3?
What is the operating temperature range of SIHF12N65E-GE3?
Does SIHF12N65E-GE3 have built-in protection features?
Is SIHF12N65E-GE3 suitable for high-frequency switching applications?
What are the recommended gate drive voltage and current for SIHF12N65E-GE3?
Are there any thermal considerations when using SIHF12N65E-GE3 in a design?