SIHF16N50C-E3
Product Overview
Category
The SIHF16N50C-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching circuits.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHF16N50C-E3 is typically available in a TO-220AB package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 500V
- Continuous Drain Current (ID): 16A
- On-Resistance (RDS(on)): 0.52Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 38nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHF16N50C-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Higher gate charge compared to some alternative models
- Limited operating temperature range
Working Principles
The SIHF16N50C-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of applications, including: - Power supplies - Motor control systems - Inverters - Switching regulators - LED lighting
Detailed and Complete Alternative Models
Some alternative models to the SIHF16N50C-E3 include: - IRFP460 - STP16NF06L - FQP16N25
In conclusion, the SIHF16N50C-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component in power supply and control applications. Its characteristics and functional features make it suitable for diverse electronic systems, although users should consider its limitations such as gate charge and operating temperature range when selecting alternatives.
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What is the maximum drain-source voltage of SIHF16N50C-E3?
- The maximum drain-source voltage of SIHF16N50C-E3 is 500V.
What is the continuous drain current rating of SIHF16N50C-E3?
- The continuous drain current rating of SIHF16N50C-E3 is 16A.
What is the on-state resistance (RDS(on)) of SIHF16N50C-E3?
- The on-state resistance (RDS(on)) of SIHF16N50C-E3 is typically 0.45 ohms.
Can SIHF16N50C-E3 be used in high-frequency switching applications?
- Yes, SIHF16N50C-E3 is suitable for high-frequency switching applications due to its fast switching characteristics.
What is the maximum junction temperature of SIHF16N50C-E3?
- The maximum junction temperature of SIHF16N50C-E3 is 150°C.
Is SIHF16N50C-E3 RoHS compliant?
- Yes, SIHF16N50C-E3 is RoHS compliant, making it suitable for environmentally friendly designs.
Does SIHF16N50C-E3 have built-in protection features?
- SIHF16N50C-E3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What are the typical applications of SIHF16N50C-E3?
- Typical applications of SIHF16N50C-E3 include power supplies, motor control, and inverters.
What is the gate threshold voltage of SIHF16N50C-E3?
- The gate threshold voltage of SIHF16N50C-E3 is typically 2.5V.
Is SIHF16N50C-E3 suitable for use in automotive systems?
- Yes, SIHF16N50C-E3 is designed for automotive applications and meets the necessary industry standards.