Imej mungkin representasi.
Lihat spesifikasi untuk butiran produk.
SIHF7N60E-GE3

SIHF7N60E-GE3

Product Overview

Category

The SIHF7N60E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high voltage switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHF7N60E-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 7A
  • On-Resistance (Rds(on)): 1.4Ω
  • Gate-Source Voltage (Vgs): ±30V
  • Total Gate Charge (Qg): 20nC

Detailed Pin Configuration

The SIHF7N60E-GE3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control in switching applications.

Advantages

  • High voltage capability suitable for diverse applications.
  • Low on-resistance enhances energy efficiency.
  • Fast switching speed enables quick response in control systems.

Disadvantages

  • Higher gate charge compared to some alternative models.
  • May require additional circuitry for optimal performance in certain applications.

Working Principles

The SIHF7N60E-GE3 operates based on the principles of field-effect transistors, utilizing the control of voltage at the gate to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supply Applications

The MOSFET can be used in switch-mode power supplies for efficient voltage regulation and power conversion.

Motor Control

Its fast switching speed and low on-resistance make it suitable for motor drive applications, enabling precise control and energy-efficient operation.

High Voltage Switching Applications

In high voltage circuits, the SIHF7N60E-GE3 can be employed for reliable and efficient switching operations.

Detailed and Complete Alternative Models

  • IRF840: Similar voltage and current ratings, lower gate charge.
  • STP7NB60FP: Comparable specifications, lower on-resistance.

In conclusion, the SIHF7N60E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management and control applications. While it has certain advantages, such as its high voltage capability and low on-resistance, it also has limitations, including its relatively higher gate charge. Understanding its specifications, functional features, and application field plans is crucial for effectively integrating this component into electronic systems. Additionally, considering alternative models can provide insights into selecting the most suitable MOSFET for specific design requirements.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi SIHF7N60E-GE3 dalam penyelesaian teknikal

  1. What is the maximum drain-source voltage of SIHF7N60E-GE3?

    • The maximum drain-source voltage of SIHF7N60E-GE3 is 600V.
  2. What is the continuous drain current rating of SIHF7N60E-GE3?

    • The continuous drain current rating of SIHF7N60E-GE3 is 7A.
  3. What is the on-state resistance (RDS(on)) of SIHF7N60E-GE3?

    • The on-state resistance (RDS(on)) of SIHF7N60E-GE3 is typically 1.5 ohms.
  4. What is the gate threshold voltage of SIHF7N60E-GE3?

    • The gate threshold voltage of SIHF7N60E-GE3 is typically 2.5V.
  5. Is SIHF7N60E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHF7N60E-GE3 is suitable for high-frequency switching applications due to its fast switching characteristics.
  6. What is the maximum junction temperature of SIHF7N60E-GE3?

    • The maximum junction temperature of SIHF7N60E-GE3 is 150°C.
  7. Does SIHF7N60E-GE3 have built-in protection features?

    • SIHF7N60E-GE3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
  8. What are the typical applications for SIHF7N60E-GE3?

    • Typical applications for SIHF7N60E-GE3 include power supplies, motor control, lighting, and inverters.
  9. What is the package type of SIHF7N60E-GE3?

    • SIHF7N60E-GE3 is available in a TO-220AB package.
  10. Is SIHF7N60E-GE3 RoHS compliant?

    • Yes, SIHF7N60E-GE3 is RoHS compliant, making it suitable for environmentally friendly designs.