SIHH100N60E-T1-GE3
Product Overview
Category: Power Semiconductor
Use: High-power switching applications
Characteristics: High voltage, high current, low on-state resistance
Package: TO-247
Essence: Silicon Insulated Gate Bipolar Transistor (IGBT)
Packaging/Quantity: Tube/25 units
Specifications
- Voltage Rating: 600V
- Current Rating: 100A
- On-State Resistance: 0.15Ω
- Gate-Emitter Voltage: ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SIHH100N60E-T1-GE3 features a standard TO-247 pin configuration with three pins: collector, gate, and emitter.
Functional Features
- High voltage capability
- Low saturation voltage
- Fast switching speed
- Positive temperature coefficient for easy paralleling
Advantages
- Suitable for high-power applications
- Low conduction losses
- Robust and reliable design
Disadvantages
- Higher cost compared to traditional power transistors
- Requires careful handling due to high voltage capabilities
Working Principles
The SIHH100N60E-T1-GE3 operates based on the principles of IGBT technology, combining the advantages of MOSFETs and bipolar transistors to achieve high efficiency and fast switching characteristics.
Detailed Application Field Plans
This IGBT is ideal for use in various high-power applications such as motor drives, renewable energy systems, industrial inverters, and welding equipment.
Detailed and Complete Alternative Models
- SIHH80N60E-T1-GE3: Lower current rating (80A) alternative
- SIHH120N60E-T1-GE3: Higher current rating (120A) alternative
- SIHH100N60E-T2-GE3: Alternative with different packaging (TO-220)
In conclusion, the SIHH100N60E-T1-GE3 is a high-performance IGBT suitable for demanding high-power switching applications, offering excellent characteristics and reliability.
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What is the maximum voltage rating of SIHH100N60E-T1-GE3?
- The maximum voltage rating of SIHH100N60E-T1-GE3 is 600V.
What is the continuous drain current of SIHH100N60E-T1-GE3?
- The continuous drain current of SIHH100N60E-T1-GE3 is 100A.
What is the on-state resistance of SIHH100N60E-T1-GE3?
- The on-state resistance of SIHH100N60E-T1-GE3 is typically 0.06 ohms.
Can SIHH100N60E-T1-GE3 be used in high-power applications?
- Yes, SIHH100N60E-T1-GE3 is suitable for high-power applications due to its high current and voltage ratings.
What is the gate threshold voltage of SIHH100N60E-T1-GE3?
- The gate threshold voltage of SIHH100N60E-T1-GE3 is typically 4V.
Is SIHH100N60E-T1-GE3 suitable for switching applications?
- Yes, SIHH100N60E-T1-GE3 is designed for efficient switching applications.
What are the typical applications of SIHH100N60E-T1-GE3?
- SIHH100N60E-T1-GE3 is commonly used in motor control, power supplies, and inverters.
Does SIHH100N60E-T1-GE3 require a heatsink for thermal management?
- Depending on the application and power dissipation, a heatsink may be required for optimal thermal management.
What is the operating temperature range of SIHH100N60E-T1-GE3?
- SIHH100N60E-T1-GE3 has an operating temperature range of -55°C to 150°C.
Is SIHH100N60E-T1-GE3 RoHS compliant?
- Yes, SIHH100N60E-T1-GE3 is RoHS compliant, making it suitable for environmentally conscious designs.