SIHP12N50E-GE3
Product Overview
Category
The SIHP12N50E-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching circuits.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHP12N50E-GE3 is typically available in a TO-220AB package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 500V
- Continuous Drain Current (ID): 12A
- On-Resistance (RDS(on)): 0.65Ω
- Power Dissipation (PD): 150W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHP12N50E-GE3 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in diverse applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Enhanced efficiency in power management
Disadvantages
- May require additional circuitry for driving the gate due to high gate-source voltage
Working Principles
The SIHP12N50E-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
- Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation.
- Motor Control: Enables precise control of motors in industrial and automotive applications.
- Inverters: Used in the construction of inverters for converting DC power to AC power in renewable energy systems.
Detailed and Complete Alternative Models
- IRFP460: Similar power MOSFET with a higher drain-source voltage rating.
- STP16NF06: Alternative MOSFET with comparable characteristics and performance.
In conclusion, the SIHP12N50E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications.
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What is the maximum voltage rating of SIHP12N50E-GE3?
- The maximum voltage rating of SIHP12N50E-GE3 is 500V.
What is the maximum current rating of SIHP12N50E-GE3?
- The maximum current rating of SIHP12N50E-GE3 is 12A.
What type of package does SIHP12N50E-GE3 come in?
- SIHP12N50E-GE3 comes in a TO-220AB package.
What are the typical applications for SIHP12N50E-GE3?
- SIHP12N50E-GE3 is commonly used in power supplies, motor control, and lighting applications.
What is the on-state resistance of SIHP12N50E-GE3?
- The on-state resistance of SIHP12N50E-GE3 is typically around 0.45 ohms.
Is SIHP12N50E-GE3 suitable for high-frequency switching applications?
- Yes, SIHP12N50E-GE3 is suitable for high-frequency switching due to its low on-state resistance.
Does SIHP12N50E-GE3 have built-in protection features?
- SIHP12N50E-GE3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the thermal resistance of SIHP12N50E-GE3?
- The thermal resistance of SIHP12N50E-GE3 is typically around 62°C/W.
Can SIHP12N50E-GE3 be used in automotive applications?
- Yes, SIHP12N50E-GE3 is suitable for automotive applications due to its rugged construction and high voltage rating.
Are there any recommended heatsinking guidelines for SIHP12N50E-GE3?
- It is recommended to use a proper heatsink to ensure efficient heat dissipation when using SIHP12N50E-GE3 in high-power applications.