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SIHP4N80E-GE3

SIHP4N80E-GE3

Product Overview

Category

The SIHP4N80E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as in power supplies, motor control, and lighting systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance

Package

The SIHP4N80E-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is designed to efficiently handle high power levels while minimizing losses.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 800V
  • Continuous Drain Current (ID): 4A
  • On-Resistance (RDS(on)): 1.8Ω
  • Power Dissipation (PD): 150W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHP4N80E-GE3 features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages

  • High voltage capability allows for versatile applications
  • Low on-resistance minimizes power losses
  • Fast switching speed enhances efficiency

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful consideration of drive circuitry due to high voltage rating

Working Principles

The SIHP4N80E-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for use in various applications, including: - Switched-mode power supplies - Motor drives - Lighting ballasts - Inverters

Detailed and Complete Alternative Models

  • IRFP460: Similar high-voltage MOSFET with comparable specifications
  • STP4NK80Z: Alternative option with enhanced thermal performance

In conclusion, the SIHP4N80E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for diverse power management applications. While it comes with advantages such as versatility and efficiency, careful consideration of drive circuitry and cost should be taken into account. Its working principles align with standard MOSFET operation, and it finds application in power supplies, motor control, and lighting systems. Additionally, alternative models like the IRFP460 and STP4NK80Z provide options with similar capabilities.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi SIHP4N80E-GE3 dalam penyelesaian teknikal

  1. What is the maximum voltage rating of SIHP4N80E-GE3?

    • The maximum voltage rating of SIHP4N80E-GE3 is 800V.
  2. What is the maximum continuous drain current of SIHP4N80E-GE3?

    • The maximum continuous drain current of SIHP4N80E-GE3 is 4A.
  3. What type of package does SIHP4N80E-GE3 come in?

    • SIHP4N80E-GE3 comes in a TO-220AB package.
  4. What is the on-resistance of SIHP4N80E-GE3?

    • The on-resistance of SIHP4N80E-GE3 is typically 1.8 ohms.
  5. Is SIHP4N80E-GE3 suitable for high-power applications?

    • Yes, SIHP4N80E-GE3 is designed for high-power applications.
  6. What is the gate threshold voltage of SIHP4N80E-GE3?

    • The gate threshold voltage of SIHP4N80E-GE3 is typically 2.5V.
  7. Does SIHP4N80E-GE3 have built-in protection features?

    • SIHP4N80E-GE3 has built-in overcurrent and thermal protection features.
  8. Can SIHP4N80E-GE3 be used in automotive applications?

    • Yes, SIHP4N80E-GE3 is suitable for automotive applications.
  9. What is the operating temperature range of SIHP4N80E-GE3?

    • The operating temperature range of SIHP4N80E-GE3 is -55°C to 175°C.
  10. Is SIHP4N80E-GE3 RoHS compliant?

    • Yes, SIHP4N80E-GE3 is RoHS compliant.