SIHP5N50D-GE3

Introduction

The SIHP5N50D-GE3 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and functional features. This entry provides an overview of the SIHP5N50D-GE3, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHP5N50D-GE3 is used as a switching device in power supply circuits, motor control, and other high voltage applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: TO-220AB
• Essence: The essence of SIHP5N50D-GE3 lies in its ability to handle high voltages and currents with minimal power loss.
• Packaging/Quantity: Typically packaged in reels or tubes containing multiple units.

Specifications

• Voltage Rating: 500V
• Current Rating: 5A
• On-State Resistance: 1.4Ω
• Gate-Source Voltage (Max): ±20V
• Package Type: TO-220AB
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHP5N50D-GE3 follows the standard pin configuration for a TO-220AB package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-State Resistance: Enables efficient power transfer and reduces conduction losses.
• High Switching Speed: Facilitates rapid switching operations, suitable for high-frequency applications.
• Low Gate Charge: Allows for quick and precise control of the MOSFET.

Advantages and Disadvantages

Advantages

• High voltage and current handling capability
• Low on-state resistance for reduced power dissipation
• Fast switching speed for improved efficiency

Disadvantages

• Sensitivity to static electricity and overvoltage conditions
• Gate drive circuitry complexity for optimal performance

Working Principles

The SIHP5N50D-GE3 operates based on the principle of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the source and drain terminals. By modulating the gate-source voltage, the MOSFET can be turned on or off, allowing or blocking the flow of current through the device.

Detailed Application Field Plans

The SIHP5N50D-GE3 finds extensive use in the following applications: - Switched-mode power supplies - Motor control circuits - Inverters and converters for renewable energy systems - High voltage DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SIHP5N50D-GE3 include: - IRFP460: Similar voltage and current ratings - STP5NK50ZFP: Comparable characteristics and package type - FQP5N50C: Alternative option with similar specifications

In conclusion, the SIHP5N50D-GE3 power MOSFET offers high-performance characteristics and is well-suited for a wide range of high voltage applications, despite its sensitivity to certain operating conditions. Its efficient power handling capabilities and fast switching speed make it a valuable component in modern electronic systems.

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