SIHW30N60E-GE3

Introduction

The SIHW30N60E-GE3 is a power semiconductor device that belongs to the category of insulated-gate bipolar transistors (IGBTs). This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIHW30N60E-GE3.

Basic Information Overview

• Category: Insulated-Gate Bipolar Transistor (IGBT)
• Use: Power switching applications in various electronic devices and systems
• Characteristics: High voltage and current handling capabilities, low on-state voltage drop, fast switching speed
• Package: TO-247AC
• Essence: Power control and conversion
• Packaging/Quantity: Typically packaged individually, quantity varies based on manufacturer's specifications

Specifications

• Voltage Rating: 600V
• Current Rating: 30A
• Maximum Operating Temperature: 150°C
• Gate-Emitter Voltage: ±20V
• Collector-Emitter Saturation Voltage: 1.8V
• Turn-On Delay Time: 55ns
• Turn-Off Delay Time: 140ns

Detailed Pin Configuration

The SIHW30N60E-GE3 typically has three main pins: 1. Collector (C): Connects to the high-power load or circuit 2. Emitter (E): Connected to the ground or return path 3. Gate (G): Input terminal for controlling the switching operation

Functional Features

• High voltage and current handling capacity
• Fast switching speed
• Low on-state voltage drop
• Robust thermal performance

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Low conduction losses
• Enhanced thermal stability

Disadvantages

• Higher cost compared to traditional power transistors
• Complex drive circuitry required

Working Principles

The SIHW30N60E-GE3 operates based on the principles of IGBT technology, which combines the advantages of MOSFETs and bipolar junction transistors (BJTs). When a positive voltage is applied to the gate terminal, it allows current to flow between the collector and emitter terminals, enabling power control and switching.

Detailed Application Field Plans

The SIHW30N60E-GE3 finds extensive use in various applications, including: - Motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Induction heating systems - Welding equipment

Detailed and Complete Alternative Models

Some alternative models to the SIHW30N60E-GE3 include: - IRGP4063DPBF - FGA25N120ANTD - IXGH32N170A

In conclusion, the SIHW30N60E-GE3 is a high-performance IGBT designed for power switching applications in diverse fields, offering excellent characteristics and functional features. Its robust design and versatile applications make it a valuable component in modern electronic systems.

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