The SIR401DP-T1-GE3 belongs to the category of power MOSFETs.
The SIR401DP-T1-GE3 has the following specifications: - Drain-Source Voltage (VDS): 30V - Continuous Drain Current (ID): 120A - RDS(ON) Max @ VGS = 10V: 1.2mΩ - Power Dissipation (PD): 200W
The pin configuration of the SIR401DP-T1-GE3 is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Advantages: - High efficiency - Fast switching speed - Low on-resistance
Disadvantages: - Sensitivity to voltage spikes - Potential for thermal runaway under extreme conditions
The SIR401DP-T1-GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
The SIR401DP-T1-GE3 finds application in various fields including: - Power supplies - Motor control - LED lighting - Battery management systems
Some alternative models to the SIR401DP-T1-GE3 include: - AON6714 - SI7850DP-T1-GE3 - FDD6637
This comprehensive entry provides an in-depth understanding of the SIR401DP-T1-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is the SIR401DP-T1-GE3 used for in technical solutions?
What are the key features of the SIR401DP-T1-GE3?
What voltage and current ratings does the SIR401DP-T1-GE3 support?
How does the SIR401DP-T1-GE3 contribute to power management in technical solutions?
What are the thermal considerations when using the SIR401DP-T1-GE3 in technical solutions?
Can the SIR401DP-T1-GE3 be used in automotive applications?
Are there any application notes or reference designs available for the SIR401DP-T1-GE3?
What are the recommended operating conditions for the SIR401DP-T1-GE3?
Does the SIR401DP-T1-GE3 have built-in protection features?
Where can I find detailed specifications and datasheets for the SIR401DP-T1-GE3?