SIRA90DP-T1-GE3

Introduction

The SIRA90DP-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor device
• Use: Power switching applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-252-3 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications

• Voltage Rating: 900V
• Current Rating: 10A
• On-Resistance: 0.9Ω
• Gate Charge: 30nC
• Operating Temperature Range: -55°C to 150°C
• Mounting Type: Surface Mount

Detailed Pin Configuration

The SIRA90DP-T1-GE3 features a standard TO-252-3 (DPAK) package with three pins: 1. Pin 1 (G): Gate 2. Pin 2 (D): Drain 3. Pin 3 (S): Source

Functional Features

• High voltage capability suitable for various power applications
• Low on-resistance minimizes power losses and improves efficiency
• Fast switching speed enables rapid power control

Advantages and Disadvantages

Advantages

• Efficient power management
• Suitable for high voltage applications
• Low power dissipation

Disadvantages

• Limited current handling capacity compared to higher-rated devices
• Sensitivity to overvoltage conditions

Working Principles

The SIRA90DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the device enters a low-resistance state, allowing efficient power transfer.

Detailed Application Field Plans

The SIRA90DP-T1-GE3 is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters - Electronic ballasts

Detailed and Complete Alternative Models

• Alternative Model 1: SIR804DP-T1-GE3
• Alternative Model 2: SIRA80DP-T1-GE3
• Alternative Model 3: SIRA100DP-T1-GE3

In summary, the SIRA90DP-T1-GE3 is a high-voltage power MOSFET designed for efficient power management in various applications. Its low on-resistance, fast switching speed, and high voltage capability make it a versatile choice for power switching needs.

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