SQD07N25-350H_GE3

Introduction

The SQD07N25-350H_GE3 is a power semiconductor device belonging to the category of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The SQD07N25-350H_GE3 is utilized as a switching device in power supply, motor control, and other high-frequency applications.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The device is typically available in a TO-252 package, providing ease of mounting and thermal dissipation.
• Essence: The essence of SQD07N25-350H_GE3 lies in its ability to efficiently handle high power levels while maintaining low losses.
• Packaging/Quantity: The SQD07N25-350H_GE3 is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

The detailed specifications of SQD07N25-350H_GE3 include: - Drain-Source Voltage (VDS): 250V - Continuous Drain Current (ID): 7A - On-State Resistance (RDS(on)): 0.35Ω - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 15nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The pin configuration of SQD07N25-350H_GE3 is as follows: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)

Functional Features

The functional features of SQD07N25-350H_GE3 include: - High-speed switching capability - Low on-state resistance for reduced conduction losses - Enhanced thermal performance for improved reliability

Advantages and Disadvantages

Advantages: - Efficient power handling - Fast switching speed - Low conduction losses

Disadvantages: - Sensitivity to overvoltage conditions - Limited avalanche energy rating

Working Principles

The SQD07N25-350H_GE3 operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals, enabling efficient power switching.

Detailed Application Field Plans

The SQD07N25-350H_GE3 finds extensive application in: - Switch-mode power supplies - Motor drive circuits - Inverters and converters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to SQD07N25-350H_GE3 include: - IRF540N - FDP8870 - STP80NF55-06

In conclusion, the SQD07N25-350H_GE3 MOSFET offers high-performance characteristics and is widely utilized in diverse electronic applications requiring efficient power switching and control.

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