SQD10N30-330H_GE3
Product Overview
Category
The SQD10N30-330H_GE3 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The SQD10N30-330H_GE3 is typically available in a TO-252 package.
Essence
This product is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
The SQD10N30-330H_GE3 is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 300V
- Current Rating: 10A
- On-State Resistance: 0.33Ω
- Package Type: TO-252
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SQD10N30-330H_GE3 features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage and current handling capacity
- Low on-state resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Compatibility with standard gate drive voltages
Advantages and Disadvantages
Advantages
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Reliable performance in high-power applications
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- May require additional heat sinking in high-power applications
Working Principles
The SQD10N30-330H_GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable gate voltage is applied, the device allows the flow of current between the drain and source terminals, enabling efficient power switching.
Detailed Application Field Plans
The SQD10N30-330H_GE3 is widely used in the following application fields: - Switching power supplies - Motor control systems - Inverters and converters - Electronic lighting ballasts - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the SQD10N30-330H_GE3 include: - IRF540N - FQP30N06L - STP16NF06FP - IRLB8748PBF
In conclusion, the SQD10N30-330H_GE3 power MOSFET offers high-performance characteristics suitable for a wide range of high-power switching applications, making it an essential component in modern electronic systems.
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What is the maximum drain-source voltage of SQD10N30-330H_GE3?
- The maximum drain-source voltage of SQD10N30-330H_GE3 is 300V.
What is the continuous drain current rating of SQD10N30-330H_GE3?
- The continuous drain current rating of SQD10N30-330H_GE3 is 10A.
What is the on-resistance of SQD10N30-330H_GE3?
- The on-resistance of SQD10N30-330H_GE3 is typically 0.33 ohms.
What is the gate threshold voltage of SQD10N30-330H_GE3?
- The gate threshold voltage of SQD10N30-330H_GE3 is typically 2.5V.
Can SQD10N30-330H_GE3 be used in automotive applications?
- Yes, SQD10N30-330H_GE3 is suitable for automotive applications.
What is the operating temperature range of SQD10N30-330H_GE3?
- The operating temperature range of SQD10N30-330H_GE3 is -55°C to 150°C.
Is SQD10N30-330H_GE3 RoHS compliant?
- Yes, SQD10N30-330H_GE3 is RoHS compliant.
What are the typical applications for SQD10N30-330H_GE3?
- Typical applications for SQD10N30-330H_GE3 include power management, motor control, and DC-DC converters.
Does SQD10N30-330H_GE3 have built-in protection features?
- SQD10N30-330H_GE3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the package type of SQD10N30-330H_GE3?
- SQD10N30-330H_GE3 is available in a TO-252 (DPAK) package.