SQM200N04-1M8_GE3
Product Overview
Category
The SQM200N04-1M8_GE3 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic applications, including power supplies, motor control, and automotive systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Enhanced ruggedness and reliability
Package
The SQM200N04-1M8_GE3 is typically available in a TO-252 package.
Essence
The essence of this product lies in its ability to efficiently control and switch high currents in electronic circuits while minimizing power losses.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on customer requirements.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 200A
- On-Resistance (RDS(on)): 1.8mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 150nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The SQM200N04-1M8_GE3 features a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low conduction losses
- High efficiency
- Excellent thermal performance
- Robustness against voltage spikes and transients
Advantages and Disadvantages
Advantages
- High current-carrying capability
- Reduced power dissipation
- Enhanced system reliability
- Suitable for high-frequency switching applications
Disadvantages
- Sensitive to electrostatic discharge (ESD)
- Higher cost compared to traditional bipolar junction transistors (BJTs)
Working Principles
The MOSFET operates based on the principle of field-effect, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through it.
Detailed Application Field Plans
The SQM200N04-1M8_GE3 finds extensive use in: - Switched-mode power supplies - Electric vehicle powertrains - Industrial motor drives - Solar inverters - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models
Some alternative models to the SQM200N04-1M8_GE3 include: - IRF3205 - FDP8870 - AUIRFN8409
In conclusion, the SQM200N04-1M8_GE3 power MOSFET offers high-performance characteristics suitable for demanding electronic applications, making it a preferred choice for efficient power management and control.
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What is the maximum drain-source voltage of SQM200N04-1M8_GE3?
- The maximum drain-source voltage of SQM200N04-1M8_GE3 is 40V.
What is the continuous drain current rating of SQM200N04-1M8_GE3?
- The continuous drain current rating of SQM200N04-1M8_GE3 is 200A.
What is the on-resistance of SQM200N04-1M8_GE3?
- The on-resistance of SQM200N04-1M8_GE3 is typically 1.8mΩ.
Can SQM200N04-1M8_GE3 be used in automotive applications?
- Yes, SQM200N04-1M8_GE3 is suitable for automotive applications.
What is the operating temperature range of SQM200N04-1M8_GE3?
- The operating temperature range of SQM200N04-1M8_GE3 is -55°C to 175°C.
Does SQM200N04-1M8_GE3 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal performance.
Is SQM200N04-1M8_GE3 RoHS compliant?
- Yes, SQM200N04-1M8_GE3 is RoHS compliant.
What are the typical applications for SQM200N04-1M8_GE3?
- Typical applications for SQM200N04-1M8_GE3 include motor control, power supplies, and inverters.
What gate drive voltage is recommended for SQM200N04-1M8_GE3?
- A gate drive voltage of 10V is recommended for SQM200N04-1M8_GE3.
What package type does SQM200N04-1M8_GE3 come in?
- SQM200N04-1M8_GE3 is available in a PowerPAK® SO-8 package.