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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
Nombor Bahagian
NCP5109BDR2G
kategori
Power Chip > Gate Driver IC
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SOIC-8
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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Kata kunci daripada NCP5109BDR2G
NCP5109BDR2G Komponen elektronik
NCP5109BDR2G Jualan
NCP5109BDR2G Pembekal
NCP5109BDR2G Pengedar
NCP5109BDR2G Jadual data
NCP5109BDR2G Foto
NCP5109BDR2G harga
NCP5109BDR2G Tawaran
NCP5109BDR2G Harga terendah
NCP5109BDR2G Cari
NCP5109BDR2G Membeli
NCP5109BDR2G Chip