Toshiba Semiconductor and Storage
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TK11P65W,RQ
Helaian data

TK11P65W,RQ

MOSFET N-CH 650V 11.1A DPAK-0S
Nombor Bahagian
TK11P65W,RQ
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
DTMOSIV
Status Bahagian
Active
Pembungkusan
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
TO-252-3, DPak (2 Leads + Tab), SC-63
Pakej Peranti Pembekal
DPAK
Pelesapan Kuasa (Maks)
100W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
650V
Arus - Longkang Berterusan (Id) @ 25�C
11.1A (Ta)
Rds On (Maks) @ Id, Vgs
440 mOhm @ 5.5A, 10V
Vgs(th) (Maks) @ Id
3.5V @ 450µA
Caj Gerbang (Qg) (Maks) @ Vgs
25nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
890pF @ 300V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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Dalam stok 44047 PCS
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