Toshiba Semiconductor and Storage
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TK16J60W,S1VQ
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TK16J60W,S1VQ

MOSFET N CH 600V 15.8A TO-3P(N)
Nombor Bahagian
TK16J60W,S1VQ
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
DTMOSIV
Status Bahagian
Active
Pembungkusan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-3P-3, SC-65-3
Pakej Peranti Pembekal
TO-3P(N)
Pelesapan Kuasa (Maks)
130W (Tc)
Jenis FET
N-Channel
Ciri FET
Super Junction
Longkang ke Voltan Sumber (Vdss)
600V
Arus - Longkang Berterusan (Id) @ 25�C
15.8A (Ta)
Rds On (Maks) @ Id, Vgs
190 mOhm @ 7.9A, 10V
Vgs(th) (Maks) @ Id
3.7V @ 790µA
Caj Gerbang (Qg) (Maks) @ Vgs
38nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
1350pF @ 300V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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