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TK20V60W5,LVQ
Helaian data

TK20V60W5,LVQ

MOSFET N-CH 600V 20A 5DFN
Nombor Bahagian
TK20V60W5,LVQ
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
DTMOSIV
Status Bahagian
Active
Pembungkusan
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
4-VSFN Exposed Pad
Pakej Peranti Pembekal
4-DFN-EP (8x8)
Pelesapan Kuasa (Maks)
156W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
600V
Arus - Longkang Berterusan (Id) @ 25�C
20A (Ta)
Rds On (Maks) @ Id, Vgs
190 mOhm @ 10A, 10V
Vgs(th) (Maks) @ Id
4.5V @ 1mA
Caj Gerbang (Qg) (Maks) @ Vgs
55nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
1800pF @ 300V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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