Toshiba Semiconductor and Storage
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TK31V60X,LQ
Helaian data

TK31V60X,LQ

MOSFET N-CH 600V 30.8A 5DFN
Nombor Bahagian
TK31V60X,LQ
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
DTMOSIV-H
Status Bahagian
Active
Pembungkusan
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
4-VSFN Exposed Pad
Pakej Peranti Pembekal
4-DFN-EP (8x8)
Pelesapan Kuasa (Maks)
240W (Tc)
Jenis FET
N-Channel
Ciri FET
Super Junction
Longkang ke Voltan Sumber (Vdss)
600V
Arus - Longkang Berterusan (Id) @ 25�C
30.8A (Ta)
Rds On (Maks) @ Id, Vgs
98 mOhm @ 9.4A, 10V
Vgs(th) (Maks) @ Id
3.5V @ 1.5mA
Caj Gerbang (Qg) (Maks) @ Vgs
65nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
3000pF @ 300V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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