Toshiba Semiconductor and Storage
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TK4A60DB(STA4,Q,M)
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TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO-220SIS
Nombor Bahagian
TK4A60DB(STA4,Q,M)
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
π-MOSVII
Status Bahagian
Active
Pembungkusan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-220-3 Full Pack
Pakej Peranti Pembekal
TO-220SIS
Pelesapan Kuasa (Maks)
35W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
600V
Arus - Longkang Berterusan (Id) @ 25�C
3.7A (Ta)
Rds On (Maks) @ Id, Vgs
2 Ohm @ 1.9A, 10V
Vgs(th) (Maks) @ Id
4.4V @ 1mA
Caj Gerbang (Qg) (Maks) @ Vgs
11nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
540pF @ 25V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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Kata kunci daripada TK4A60DB(STA4,Q,M)
TK4A60DB(STA4,Q,M) Komponen elektronik
TK4A60DB(STA4,Q,M) Jualan
TK4A60DB(STA4,Q,M) Pembekal
TK4A60DB(STA4,Q,M) Pengedar
TK4A60DB(STA4,Q,M) Jadual data
TK4A60DB(STA4,Q,M) Foto
TK4A60DB(STA4,Q,M) harga
TK4A60DB(STA4,Q,M) Tawaran
TK4A60DB(STA4,Q,M) Harga terendah
TK4A60DB(STA4,Q,M) Cari
TK4A60DB(STA4,Q,M) Membeli
TK4A60DB(STA4,Q,M) Chip