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TPC8035-H(TE12L,QM
Helaian data

TPC8035-H(TE12L,QM

MOSFET N-CH 30V 18A SOP8 2-6J1B
Nombor Bahagian
TPC8035-H(TE12L,QM
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
U-MOSVI-H
Status Bahagian
Obsolete
Pembungkusan
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
8-SOIC (0.173", 4.40mm Width)
Pakej Peranti Pembekal
8-SOP (5.5x6.0)
Pelesapan Kuasa (Maks)
1W (Ta)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
30V
Arus - Longkang Berterusan (Id) @ 25�C
18A (Ta)
Rds On (Maks) @ Id, Vgs
3.2 mOhm @ 9A, 10V
Vgs(th) (Maks) @ Id
2.3V @ 1mA
Caj Gerbang (Qg) (Maks) @ Vgs
82nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
7800pF @ 10V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
4.5V, 10V
Vgs (Maks)
±20V
Minta Sebut Harga
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