SIHG100N60E-GE3

Introduction

The SIHG100N60E-GE3 is a power semiconductor device belonging to the category of Insulated Gate Bipolar Transistors (IGBTs). This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIHG100N60E-GE3.

Basic Information Overview

• Category: Power Semiconductor Device
• Use: The SIHG100N60E-GE3 is used as a high-power switching device in various electronic applications.
• Characteristics: It exhibits high voltage and current handling capabilities, low on-state voltage drop, and fast switching speeds.
• Package: The SIHG100N60E-GE3 is typically available in a TO-247 package.
• Essence: Its essence lies in providing efficient and reliable power switching for industrial and consumer electronics applications.
• Packaging/Quantity: It is commonly packaged individually and sold in quantities suitable for production needs.

Specifications

• Voltage Rating: 600V
• Current Rating: 100A
• Maximum Operating Temperature: 150°C
• Gate-Emitter Voltage: ±20V
• On-State Voltage Drop: 1.8V at 100A

Detailed Pin Configuration

The SIHG100N60E-GE3 typically has three pins: 1. Collector (C): Connects to the load or power supply. 2. Emitter (E): Connected to the ground or return path. 3. Gate (G): Used to control the switching action of the IGBT.

Functional Features

• High voltage and current handling capacity
• Low on-state voltage drop
• Fast switching speed
• Robust and reliable performance

Advantages and Disadvantages

Advantages

• Efficient power switching
• Suitable for high-power applications
• Low conduction losses
• Fast switching speed

Disadvantages

• Higher cost compared to other power devices
• Requires careful consideration of driving and protection circuitry

Working Principles

The SIHG100N60E-GE3 operates based on the principles of controlling the flow of current between the collector and emitter terminals using the gate signal. When a suitable voltage is applied to the gate terminal, the IGBT allows current to flow, and when the gate signal is removed, the current flow ceases.

Detailed Application Field Plans

The SIHG100N60E-GE3 finds extensive use in various applications, including: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Industrial welding equipment - Power factor correction circuits

Detailed and Complete Alternative Models

Some alternative models to the SIHG100N60E-GE3 include: - IRGP4063DPBF - FGA25N120ANTD - IXGH40N60C2D1

In conclusion, the SIHG100N60E-GE3 is a high-performance IGBT designed for demanding power switching applications, offering efficient operation and robust characteristics. Its wide range of applications and availability of alternative models make it a versatile choice for various electronic designs.

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