onsemi (Ansemi)
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4N30SR2M
DC Input Isolation Voltage (rms): 4170V 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose Photoelectric Darlington Optocoupler
Nombor Bahagian
4N30SR2M
kategori
Optocoupler/LED/Digital Tube/Optoelectronic Device > Optocoupler-Phototransistor Output
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMD-6P
Pembungkusan
taping
Bilangan pakej
1000
Penerangan
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature Gallium Arsenide Infrared Emitting Diodes optically coupled to silicon epitaxial planar photo Darlingtons.
Minta Sebut Harga
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Maklumat perhubungan
Produk Berkaitan
DC Input Isolation Voltage (rms): 4170V 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose Photoelectric Darlington Optocoupler
onsemi (Ansemi)
DC Input Isolation Voltage (rms): 4170V 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose Photoelectric Darlington Optocoupler
onsemi (Ansemi)
DC Input Isolation Voltage (rms): 4170V 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose Photoelectric Darlington Optocoupler
onsemi (Ansemi)
Kata kunci daripada 4N30SR2M
4N30SR2M Komponen elektronik
4N30SR2M Jualan
4N30SR2M Pembekal
4N30SR2M Pengedar
4N30SR2M Jadual data
4N30SR2M Foto
4N30SR2M harga
4N30SR2M Tawaran
4N30SR2M Harga terendah
4N30SR2M Cari
4N30SR2M Membeli
4N30SR2M Chip