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MBRA1H100T3G 100V 1A 760mV@1A Schottky diodePower rectifier, 1.0 A, 100 V

MBRA1H100T3G

100V 1A 760mV@1A Schottky diodePower rectifier, 1.0 A, 100 V
Nombor Bahagian
MBRA1H100T3G
kategori
diode > Schottky diode
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMA
Pembungkusan
taping
Bilangan pakej
5000
Penerangan
The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It employs an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.
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