Beli onsemi (Ansemi) MBRAF3200T3G 200V 3A 840mV@3A 200V, 3.0A, Schottky diode

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MBRAF3200T3G

200V 3A 840mV@3A 200V, 3.0A, Schottky diode

Nombor Bahagian

MBRAF3200T3G

kategori

diode > Schottky diode

Pengeluar/Jenama

onsemi (Ansemi)

Enkapsulasi

SMA-FL

Pembungkusan

taping

Bilangan pakej

5000

Penerangan

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

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