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MBRS1100T3G 100V 1A 750mV@1A Schottky diodePower rectifier, 1.0 A, 100 V

MBRS1100T3G

100V 1A 750mV@1A Schottky diodePower rectifier, 1.0 A, 100 V
Nombor Bahagian
MBRS1100T3G
kategori
diode > Schottky diode
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMB (DO-214AA)
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.
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