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NSS40302PDR2G 1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A

NSS40302PDR2G

1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A
Nombor Bahagian
NSS40302PDR2G
kategori
Triode/MOS Tube/Transistor > Triode(BJT)
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SOIC-8
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors are surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. Typical applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
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Kata kunci daripada NSS40302PDR2G
NSS40302PDR2G Komponen elektronik
NSS40302PDR2G Jualan
NSS40302PDR2G Pembekal
NSS40302PDR2G Pengedar
NSS40302PDR2G Jadual data
NSS40302PDR2G Foto
NSS40302PDR2G harga
NSS40302PDR2G Tawaran
NSS40302PDR2G Harga terendah
NSS40302PDR2G Cari
NSS40302PDR2G Membeli
NSS40302PDR2G Chip