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NVD2955T4G
P channel
Nombor Bahagian
NVD2955T4G
kategori
Triode/MOS Tube/Transistor > Field Effect Transistor (MOSFET)
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
DPAK-3
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
Automotive power MOSFETs capable of withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
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