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SBRA8160T3G
60V 1A 720mV@1A 60V, 1.0A, Schottky diode
Nombor Bahagian
SBRA8160T3G
kategori
diode > Schottky diode
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMA
Pembungkusan
taping
Bilangan pakej
5000
Penerangan
The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low voltage, high frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.
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