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FQPF10N60C
Lihat Maklumat Lanjut Helaian data

FQPF10N60C

MOSFET N-CH 600V 9.5A TO-220F
Nombor Bahagian
FQPF10N60C
Pengeluar/Jenama
ON Semiconductor
Siri
QFET®
Status Bahagian
Active
Pembungkusan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
-55°C ~ 150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-220-3 Full Pack
Pakej Peranti Pembekal
TO-220F
Pelesapan Kuasa (Maks)
50W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
600V
Arus - Longkang Berterusan (Id) @ 25�C
9.5A (Tc)
Rds On (Maks) @ Id, Vgs
730 mOhm @ 4.75A, 10V
Vgs(th) (Maks) @ Id
4V @ 250µA
Caj Gerbang (Qg) (Maks) @ Vgs
57nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
2040pF @ 25V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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Kata kunci daripada FQPF10N60C
FQPF10N60C Komponen elektronik
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FQPF10N60C Pembekal
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FQPF10N60C Jadual data
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FQPF10N60C Chip