Toshiba Semiconductor and Storage
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TK65E10N1,S1X
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TK65E10N1,S1X

MOSFET N CH 100V 148A TO220
Nombor Bahagian
TK65E10N1,S1X
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
U-MOSVIII-H
Status Bahagian
Active
Pembungkusan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-220-3
Pakej Peranti Pembekal
TO-220
Pelesapan Kuasa (Maks)
192W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
100V
Arus - Longkang Berterusan (Id) @ 25�C
148A (Ta)
Rds On (Maks) @ Id, Vgs
4.8 mOhm @ 32.5A, 10V
Vgs(th) (Maks) @ Id
4V @ 1mA
Caj Gerbang (Qg) (Maks) @ Vgs
81nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
5400pF @ 50V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±20V
Minta Sebut Harga
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TK65E10N1,S1X Chip