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TPH2R306NH,L1Q
Helaian data

TPH2R306NH,L1Q

MOSFET N CH 60V 60A SOP ADV
Nombor Bahagian
TPH2R306NH,L1Q
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
U-MOSVIII-H
Status Bahagian
Active
Pembungkusan
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
8-PowerVDFN
Pakej Peranti Pembekal
8-SOP Advance (5x5)
Pelesapan Kuasa (Maks)
1.6W (Ta), 78W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
60V
Arus - Longkang Berterusan (Id) @ 25�C
60A (Tc)
Rds On (Maks) @ Id, Vgs
2.3 mOhm @ 30A, 10V
Vgs(th) (Maks) @ Id
4V @ 1mA
Caj Gerbang (Qg) (Maks) @ Vgs
72nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
6100pF @ 30V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
6.5V, 10V
Vgs (Maks)
±20V
Minta Sebut Harga
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