Toshiba Semiconductor and Storage
Imej mungkin representasi.
Lihat spesifikasi untuk butiran produk.
TPN22006NH,LQ
Helaian data

TPN22006NH,LQ

MOSFET N CH 60V 9A 8-TSON
Nombor Bahagian
TPN22006NH,LQ
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
U-MOSVIII-H
Status Bahagian
Active
Pembungkusan
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
8-PowerVDFN
Pakej Peranti Pembekal
8-TSON Advance (3.3x3.3)
Pelesapan Kuasa (Maks)
700mW (Ta), 18W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
60V
Arus - Longkang Berterusan (Id) @ 25�C
9A (Ta)
Rds On (Maks) @ Id, Vgs
22 mOhm @ 4.5A, 10V
Vgs(th) (Maks) @ Id
4V @ 100µA
Caj Gerbang (Qg) (Maks) @ Vgs
12nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
710pF @ 30V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
6.5V, 10V
Vgs (Maks)
±20V
Minta Sebut Harga
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