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TPN2R304PL,L1Q
Helaian data

TPN2R304PL,L1Q

MOSFET N-CH 40V 80A TSON
Nombor Bahagian
TPN2R304PL,L1Q
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
U-MOSIX-H
Status Bahagian
Active
Pembungkusan
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
175°C
Jenis Pemasangan
Surface Mount
Pakej / Kes
8-PowerVDFN
Pakej Peranti Pembekal
8-TSON Advance (3.3x3.3)
Pelesapan Kuasa (Maks)
630mW (Ta), 104W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
40V
Arus - Longkang Berterusan (Id) @ 25�C
80A (Tc)
Rds On (Maks) @ Id, Vgs
2.3 mOhm @ 40A, 10V
Vgs(th) (Maks) @ Id
2.4V @ 0.3mA
Caj Gerbang (Qg) (Maks) @ Vgs
41nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
3600pF @ 20V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
4.5V, 10V
Vgs (Maks)
±20V
Minta Sebut Harga
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