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NGTD17T65F2WP Trench Field Stop 650V IGBT 600V 40A FS2 Die

NGTD17T65F2WP

Trench Field Stop 650V IGBT 600V 40A FS2 Die
Nombor Bahagian
NGTD17T65F2WP
kategori
Transistor/MOS tube/transistor > IGBT tube/module
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMD
Pembungkusan
bagged
Bilangan pakej
1
Penerangan
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
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Dalam stok 56699 PCS
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Kata kunci daripada NGTD17T65F2WP
NGTD17T65F2WP Komponen elektronik
NGTD17T65F2WP Jualan
NGTD17T65F2WP Pembekal
NGTD17T65F2WP Pengedar
NGTD17T65F2WP Jadual data
NGTD17T65F2WP Foto
NGTD17T65F2WP harga
NGTD17T65F2WP Tawaran
NGTD17T65F2WP Harga terendah
NGTD17T65F2WP Cari
NGTD17T65F2WP Membeli
NGTD17T65F2WP Chip