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NGTD20T120F2WP Trench Field Stop 1.2kV IGBT 1200V 20A FS2 Die

NGTD20T120F2WP

Trench Field Stop 1.2kV IGBT 1200V 20A FS2 Die
Nombor Bahagian
NGTD20T120F2WP
kategori
Transistor/MOS tube/transistor > IGBT tube/module
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMD
Pembungkusan
bagged
Bilangan pakej
1
Penerangan
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Minta Sebut Harga
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Dalam stok 91492 PCS
Maklumat perhubungan
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onsemi (Ansemi)
Kata kunci daripada NGTD20T120F2WP
NGTD20T120F2WP Komponen elektronik
NGTD20T120F2WP Jualan
NGTD20T120F2WP Pembekal
NGTD20T120F2WP Pengedar
NGTD20T120F2WP Jadual data
NGTD20T120F2WP Foto
NGTD20T120F2WP harga
NGTD20T120F2WP Tawaran
NGTD20T120F2WP Harga terendah
NGTD20T120F2WP Cari
NGTD20T120F2WP Membeli
NGTD20T120F2WP Chip