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NSV40301MDR2G Low saturation voltage transistor, dual NPN, 40 V, 6.0 A

NSV40301MDR2G

Low saturation voltage transistor, dual NPN, 40 V, 6.0 A
Nombor Bahagian
NSV40301MDR2G
kategori
Triode/MOS Tube/Transistor > Triode(BJT)
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SOIC-8
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
ON Semiconductor's e2 PowerEdge Series Low Saturation Voltage Bipolar Transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
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Kata kunci daripada NSV40301MDR2G
NSV40301MDR2G Komponen elektronik
NSV40301MDR2G Jualan
NSV40301MDR2G Pembekal
NSV40301MDR2G Pengedar
NSV40301MDR2G Jadual data
NSV40301MDR2G Foto
NSV40301MDR2G harga
NSV40301MDR2G Tawaran
NSV40301MDR2G Harga terendah
NSV40301MDR2G Cari
NSV40301MDR2G Membeli
NSV40301MDR2G Chip