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NSV40302PDR2G 1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A

NSV40302PDR2G

1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A
Nombor Bahagian
NSV40302PDR2G
kategori
Triode/MOS Tube/Transistor > Triode(BJT)
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SOIC-8
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors are surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. Typical applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Minta Sebut Harga
Sila lengkapkan semua medan yang diperlukan dan klik "SERAH", kami akan menghubungi anda dalam masa 12 jam melalui e-mel. Jika anda menghadapi sebarang masalah, sila tinggalkan mesej atau e-mel kepada [email protected], kami akan bertindak balas secepat mungkin.
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Kata kunci daripada NSV40302PDR2G
NSV40302PDR2G Komponen elektronik
NSV40302PDR2G Jualan
NSV40302PDR2G Pembekal
NSV40302PDR2G Pengedar
NSV40302PDR2G Jadual data
NSV40302PDR2G Foto
NSV40302PDR2G harga
NSV40302PDR2G Tawaran
NSV40302PDR2G Harga terendah
NSV40302PDR2G Cari
NSV40302PDR2G Membeli
NSV40302PDR2G Chip