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FQA10N80_F109
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FQA10N80_F109

MOSFET N-CH 800V 9.8A TO-3P
Nombor Bahagian
FQA10N80_F109
Pengeluar/Jenama
ON Semiconductor
Siri
QFET®
Status Bahagian
Obsolete
Pembungkusan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
-55°C ~ 150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-3P-3, SC-65-3
Pakej Peranti Pembekal
TO-3P
Pelesapan Kuasa (Maks)
240W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
800V
Arus - Longkang Berterusan (Id) @ 25�C
9.8A (Tc)
Rds On (Maks) @ Id, Vgs
1.05 Ohm @ 4.9A, 10V
Vgs(th) (Maks) @ Id
5V @ 250µA
Caj Gerbang (Qg) (Maks) @ Vgs
71nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
2700pF @ 25V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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Maklumat perhubungan
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FQA10N80_F109 Membeli
FQA10N80_F109 Chip