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FQA10N80C-F109
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FQA10N80C-F109

MOSFET N-CH 800V 10A TO-3P
Nombor Bahagian
FQA10N80C-F109
Pengeluar/Jenama
ON Semiconductor
Siri
QFET®
Status Bahagian
Active
Pembungkusan
Tube
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
-55°C ~ 150°C (TJ)
Jenis Pemasangan
Through Hole
Pakej / Kes
TO-3P-3, SC-65-3
Pakej Peranti Pembekal
TO-3P
Pelesapan Kuasa (Maks)
240W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
800V
Arus - Longkang Berterusan (Id) @ 25�C
10A (Tc)
Rds On (Maks) @ Id, Vgs
1.1 Ohm @ 5A, 10V
Vgs(th) (Maks) @ Id
5V @ 250µA
Caj Gerbang (Qg) (Maks) @ Vgs
58nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
2800pF @ 25V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
10V
Vgs (Maks)
±30V
Minta Sebut Harga
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Maklumat perhubungan
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Kata kunci daripada FQA10N80C-F109
FQA10N80C-F109 Komponen elektronik
FQA10N80C-F109 Jualan
FQA10N80C-F109 Pembekal
FQA10N80C-F109 Pengedar
FQA10N80C-F109 Jadual data
FQA10N80C-F109 Foto
FQA10N80C-F109 harga
FQA10N80C-F109 Tawaran
FQA10N80C-F109 Harga terendah
FQA10N80C-F109 Cari
FQA10N80C-F109 Membeli
FQA10N80C-F109 Chip